Active circuits under wire bonding I/O pads in 0.13 μm eight-level Cu metal, FSG low-k inter-metal dielectric CMOS technology+

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 466-468

  Chou, Kuo Yu ^b   Chen, Ming Jer ^a,b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Aluminum metal film; Copper metal; Fluorinated silicate glass; I O bond pad; Inter metal dielectric; Low k; Ring oscillator

Indexed keywords

DEGRADATION; ELECTRIC NETWORK ANALYSIS; GATES (TRANSISTOR); GLASS BONDING; METALLIC FILMS; OSCILLATORS (ELECTRONIC); PERMITTIVITY; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL CYCLING;

RING OSCILLATORS;

CMOS INTEGRATED CIRCUITS;

EID: 0035474991     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954913     Document Type: Article

References (5)

1. A new integration technology that enables forming bonding pads on active areas
2. Wire bonds over active circuits
3. ESD protection under wire bonding pads
4. A manufacturable and reliable low-k inter-metal dielectric using fluorinated oxide (FSG)