Strain relaxation and dislocation introduction in lattice-mismatched inas/gap heteroepitaxy

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 81, Issue 10, 2001, Pages 2481-2501

  Gopala, V ^a   Vasilie, L ^a   Kvam, E P ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035471170     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610108217159     Document Type: Article

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