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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 A, 2001, Pages 5294-5299

Effects of rapid thermal annealing after plasma H2 pretreatment of the copper seed layer surface on copper electroplating

(4) Oh, J a Lee, H a Paul, A a Lee, C a

a Inha University (South Korea)

Author keywords

Copper; Electroplating; Plasma pretreatment; RTA (rapid thermal annealing); Seed layer

Indexed keywords

COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROPLATING; FILMS; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; PLASMAS; RAPID THERMAL ANNEALING; SILICON WAFERS; TANTALUM COMPOUNDS; ULSI CIRCUITS;

COPPER ELECTROPLATING; HIGH ELECTROMIGRATION RESISTANCE; PLASMA PRETREATMENT; SEED LAYER;

ELECTROPLATED PRODUCTS;

EID: 0035457019 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5294 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.