Numerical simulation of surface diffusion controlled motion and shape change of electromigration voids

Materials Research Society Symposium - Proceedings

Volumn 428, Issue , 1996, Pages 161-166

  Kraft, O ^a   Moeckl, U E ^a   Arzt, E ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTROMIGRATION; FILM GROWTH; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; SEMICONDUCTOR DEVICE MODELS; SURFACE STRUCTURE;

DIFFUSION PATHWAYS; ELECTROMIGRATION VOIDS; SURFACE DIFFUSIVITY;

SEMICONDUCTING FILMS;

EID: 0030381116     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-428-161     Document Type: Conference Paper

References (26)