Laser induced damage in GaAs at 1.06 μm wavelength: Surface effects

Optics and Laser Technology

Volumn 28, Issue 1, 1996, Pages 25-34

  Kuanr, A V ^a   Bansal, S K ^a,b   Srivastava, G P ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Damage morphology; Finite difference method; Laser induced damage threshold (LIDT); Lasers (Nd: glass); Power density

Indexed keywords

FINITE DIFFERENCE METHOD; LASER BEAM EFFECTS; LASER PULSES; MATHEMATICAL MODELS; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTOR LASERS; SURFACES; THERMAL EFFECTS;

DAMAGE MORPHOLOGY; LASER INDUCED DAMAGE THRESHOLD; PHOTOEXCITED CARRIERS; POWER DENSITY; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030082794     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-3992(95)00075-5     Document Type: Article

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