Implanter, RTP system issues for ultrashallow junction formation

Solid State Technology

Volumn 44, Issue 9, 2001, Pages 77-78+80+82+84

  Ameen, M ^a   Hebb, J ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CONTROL SYSTEMS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE MEASUREMENT;

RAPID THERMAL PROCESSING SYSTEM; ULTRASHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0035448520     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. Junctions for deep sub-100nm NMOS: How far will ion implantation take us?
2. Energy contamination control in deceleration beam lLine
3. Furnace-based rapid thermal processing
4. Wafer temperature measurement in a furnace-based RTP system
5. Temperature control and uniformity in a furnace-based RTP system