Improved compact modeling of output conductance and cutoff frequency of bipolar transistors

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 9, 2001, Pages 1390-1398

  Paasschens, J C J ^a   Kloosterman, W J ^a   Havens, R J ^a   De Graaff, H C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Bipolar transistors; Circuit simulation; Compact modeling; Distortion; High frequency; Mextram

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC CONDUCTANCE; EQUIVALENT CIRCUITS; SEMICONDUCTOR DEVICE MODELS;

CUTOFF FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 0035446307     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.944668     Document Type: Article

References (11)

1. A unified circuit model for bipolar transistors including quasisaturation effects
2. Modeling of the collector epilayer of a bipolar transistor in the Mextram model
3. Vbic95, The vertical bipolar intercompany model
4. Physics-based minority charge and transit time modeling for bipolar transistors
5. Compact modeling of high-frequency distortion in bipolar transistors
6. The dependence of transistor parameters on the distribution of base layer resistivity
7. A charge control relation for bipolar transistors
8. Unified apparent bandgap narrowing in n- and p-type silicon
9. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
10. Equivalent circuit of a transistor with a lightly doped collector operating in saturation
11. A generalized integral charge-control relation and its application to compact models for silicon-based HBT's