Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2102-2107

  Suzuki, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Bandgap narrowing; Base transit time; Bipolar transistor; Velocity saturation

Indexed keywords

CARRIER MOBILITY; ENERGY GAP; HETEROJUNCTIONS; ITERATIVE METHODS; SEMICONDUCTOR DOPING; VARIATIONAL TECHNIQUES; VELOCITY;

BASE COLLECTOR JUNCTION; MINIMUM BASE TRANSIT TIME; OPTIMUM BASE DOPING PROFILE; VELOCITY SATURATION;

BIPOLAR TRANSISTORS;

EID: 0035446015     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944202     Document Type: Article

References (18)

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13. Transport equation in heavy doped silicon
14. Effects of space-charge layer widening in junction transistors
15. Bipolar transistor base bandgap grading for minimum delay