Distribution of base dopant for transit time minimization in a bipolar transistor

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 170-172

  Winterton, S S ^a   Searles, S ^b   Peters, C J ^b   Tarr, N G ^a   Pulfrey, D L ^a  

^a CARLETON UNIVERSITY   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIFFERENTIATION (CALCULUS); ELECTRONS; ITERATIVE METHODS; LAGRANGE MULTIPLIERS; PIECEWISE LINEAR TECHNIQUES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; VARIATIONAL TECHNIQUES;

CONVENTIONAL VARIATIONAL CALCULUS ANALYSIS; CUT OFF FREQUENCY; EULER-LAGRANGE EQUATION; HOLE CONCENTRATION; INTRINSIC BASE RESISTANCE; MAXIMUM FREQUENCY; VERY LOW TEMPERATURE EPITAXY;

BIPOLAR TRANSISTORS;

EID: 0029774239     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477610     Document Type: Article

References (9)

1. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits 2nd ed. New York: Wiley, p. 337, 1986.
2. A. H. Marshak, "Optimum doping distribution for minimum base transi time," IEEE Tran-;. Electron Dev., vol. ED-14, p. 190-194, 1967.
3. J. M. McGregor, T. Manku and D. J. Roulston, "Bipolar transistor bas bandgap grading for minimum delay," Solid-Stale Electron., vol. 34, p 42M23, 1991;
4. and Solid-Stale Electron., vol. 35, p. 1383, 1992.
5. N. D. Arora, J. R. Hauser and D. J. Roulston, "Electron and hol mobilities in silicon as a function of concentration and temperature, IEEE Trans. Electron Devices, vol. ED-29, p. 292-5, 1982.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York Wiley, p. 143, 1981.
7. J. N. Burgharlz, S. R. Mader, B. J. Ginsberg, B. S. Meyerson, J. M C. Stork, C. L. Stanis, J. Y.-C. Sun aiicl M. R. Polcari, "Self-aligne epitaxial base npn transistors by selective epitaxy eimtter windo (SHEW) technology," IEEE Trans. Electron Dev., vol. 38, pp. 378-85 1991.
8. P. J. van Wïjnen and R. D. Gardner, "A new approach to optimizing th base profile for high-speed bipolar transistors," IEEE Electron Devic Lett., vol. 11, pp. 149-152, 1990.
9. K. Suzuki, "Optimum base doping profile for minimum base transi time," IEEE Tram. Electron Devices, vol. ED-38, pp. 2128-33, 1991.