Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures

Semiconductors

Volumn 31, Issue 10, 1997, Pages 1046-1048

  Bazhenov, N L ^a   Zegrya, G G ^a   Ivanov Omskii V I ^a   Mikhailova M P ^a   Mikhailov M Yu ^a   Moiseev, K D ^a   Smirnov, V A ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003161537     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187022     Document Type: Article

References (5)

1. M. P. Mikhailova, G. G. Zegrya, K. D. Moiseev, and Yu. P. Yakovlev, Solid State Electron. 40, 673 (1996).
2. N. L. Bazhenov, G. G. Zegrya, M. P. Mikhailova, K. D. Moiseev, V. A. Smirnov, O. Yu. Solov'eva, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 11, 658 (1977) [sic.]
3. N. L. Bazhenov, G. G. Zegrya, V. I. Ivanov-Omskii, K. D. Moiseev, M. P. Mikhailova, V. A. Smirnov, and Yu. P. Yakovlev, 23rd International Symp. on Compound Semiconductors, September 23-27, St. Petersburg, Russia, rep. 11. p2.37.
4. P. K. Baranskii, V. P. Klochkov, and I. V. Potykevich, Handbook of Semiconductor Electronics [in Russian], Nauk. Dumka, Kiev, (1975).
5. X. Gong, H. Kan, T. Yamagichi, I. Sazuki, M. Aoyama, M. Kumagawa, N. L. Rowell, A. Wang, and R. Rinfret, Jpn. J. Appl. Phys. 33, 1740 (1994).