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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2414-2424

Growth of giant magnetoresistance multilayers: Effects of processing conditions during radio-frequency diode deposition

(6) Zou, W a Wadley, H N G a Zhou, X W a Ghosal, S b Kosut, R b Brownell, D c

a University of Virginia (United States)

b SC Solutions (United States)

c NVE CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DEPOSITION; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FILM GROWTH; GIANT MAGNETORESISTANCE; ION BOMBARDMENT; IONIZATION OF GASES; MAGNETIC FIELD EFFECTS; MOLECULAR DYNAMICS; PLASMA DIODES; POSITIVE IONS; PRESSURE EFFECTS; SURFACE ROUGHNESS; TRANSPORT PROPERTIES;

PLASMA POWER; RADIO-FREQUENCY (RF) DIODE DEPOSITION;

MULTILAYERS;

EID: 0035443978 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1387051 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.