Bonding of IC bare chips for microsystems using Ar atom bombardment

Journal of Micromechanics and Microengineering

Volumn 11, Issue 5, 2001, Pages 481-486

  Kohno, Akiomi ^a   Sasaki, Yasuhiko ^a   Udo, Ryujirou ^a   Harada, Takeshi ^a   Usami, Mitsuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC BEAMS; DIODES; INTEGRATED CIRCUIT MANUFACTURE; ION BOMBARDMENT; MICROELECTROMECHANICAL DEVICES; SILICON; SOLDERING; SUBSTRATES; TRANSISTORS;

ARGON ATOM BOMBARDMENT; INTEGRATED CIRCUIT BARE CHIP BONDING; MICROMECHANICAL DEVICES; MICROSYSTEMS; TEST ELEMENT GROUP;

INTEGRATED CIRCUITS;

EID: 0035443183     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/5/306     Document Type: Article

References (10)

1. Future of IC microtransducers
2. Influence of design geometry and packaging on the response of thermal CMOS flow sensors
3. Two-dimensional integrated gas flow sensors by CMOS IC technology
4. Silicon-to-silicon anodic bonding with a borosilicate glass layer
5. 2 bonding with hydrofluoric acid room temperature and low stress bonding technique for MEMS
6. Low-temperature silicon wafer bonding
7. Low temperature Nafion bonding of silicon wafers
8. Low temperature bonding technology on piezoelectric ceramics and metals
9. Room temperature silicon wafer direct bonding in vacuum by Ar beam irradiation
10. Development of surface activated bonding equipment for wafers