Behavior of molybdenum in silicon evaluated for integrated circuit processing

Journal of the Electrochemical Society

Volumn 146, Issue 5, 1999, Pages 1929-1933

  Benton, J L ^a   Jacobson, D C ^a   Jackson, B ^a,c   Johnson, J A ^a,d   Boone, T ^a   Eaglesham, D J ^a   Stevie, F A ^b   Becerro, J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c State University   (United States)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; LEAKAGE CURRENTS; MOLYBDENUM; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SOLUBILITY;

DEPTH PROFILING;

SEMICONDUCTING SILICON;

EID: 0032674355     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391868     Document Type: Article

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