SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1852-1856

  Farrow, R C ^a   Mkrtchyan, M ^a   Kizilyalli, I C ^a   Waskiewicz, W K ^a   Hopkins, L C ^a   Alakan, A ^a   Gibson, G ^a   Brown, P ^a   Misra, S ^a   Trimble, L ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CHEMICAL MECHANICAL POLISHING; CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; ELECTRONS; OXIDES; SCANNING ELECTRON MICROSCOPY; SIGNAL TO NOISE RATIO;

ELECTRON BACKSCATTERING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035440549     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1401749     Document Type: Article

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