Low damage and low surface roughness GaInP etching in Cl2/Ar electron cyclotron resonance process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1775-1781

  Yoon, S F ^a   Ng, T K ^a   Zheng, H Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CHLORINE; DESORPTION; PLASMA ETCHING; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS;

SUBSTRATE TEMPERATURE;

ELECTRON CYCLOTRON RESONANCE;

EID: 0035440548     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1396641     Document Type: Article

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