Behavior of new ZnSe(Te, O) semiconductor scintillators under high doses of ionizing radiation

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 III, 2001, Pages 1561-1564

  Ryzhikov, Vladimir D ^a   Starzhinskiy, Nikolai G ^a   Gal'chinetskii, Leonid P ^a   Guttormsen, Magne ^b   Kist, Alexander A ^c   Klamra, Wlodzimierz ^d  

^a INSTITUTE FOR SINGLE CRYSTALS   (Ukraine)

^b UNIVERSITY OF OSLO   (Norway)

^c INSTITUTE OF NUCLEAR PHYSICS   (Uzbekistan)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; GAMMA RAYS; INFRARED RADIATION; IONIZING RADIATION; LIGHT ABSORPTION; LUMINESCENCE; NEUTRONS; OPTICAL PROPERTIES; PROTONS; SCINTILLATION; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

SCINTILLATION PROPERTIES; SEMICONDUCTOR SCINTILLATORS; ZINC SELENIDE;

PHOSPHORS;

EID: 0035428484     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958396     Document Type: Conference Paper

References (17)

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