Scanning tunneling microscopy and spectroscopy of tin oxide films

Journal of the European Ceramic Society

Volumn 21, Issue 8, 2001, Pages 1115-1119

  Castro, M S ^a   Suarez M P ^a   Aldao, C M ^a  

^a UNIVERSIDAD NACIONAL DE MAR DEL PLATA   (Argentina)

Author keywords

Defects; Electrical properties; Films; Grain boundaries; Sensors; SnO2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS; TIN COMPOUNDS;

TOPOGRAPHIC IMAGES;

CERAMIC MATERIALS;

COATING; DEFECT; ELECTRICAL CONDUCTIVITY; FILM; SENSOR;

EID: 0035427472     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(00)00297-1     Document Type: Article

References (16)

1. Application of nano-crystalline porous tin oxide thin film for CO sensing
2. 2 thin film gas sensors
3. Basic aspects and challenges of semiconductor gas sensors
4. Surface chemistry of tin oxide based gas sensors
5. Solid state gas sensors
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7. Scanning probe microscopy and tunnelling measurements of polycrystal tin oxide films
8. 2?
9. Transition between neck-controlled and grain boundary-controlled sensitivity of metal-oxide gas sensors
10. The effect of microstructure on the barrier height of potential energy barriers in porous tin oxide gas sensors
11. 2 layers: Grain-size effects and ambient atmosphere influence
12. Influence of frozen distributions of oxygen vacancies on tin oxide conductance
13. Gas detection sensitivity and cluster size
14. 2 thick-film gas sensor