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Volumn 230, Issue 1-2, 2001, Pages 172-180
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Three-dimensional simulation of Marangoni flow and interfaces in floating-zone silicon crystal growth
a
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Author keywords
A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Interfaces; A1. Solidification; A2. Floating zone technique; A2. Growth from melt; A2. Microgravity conditions; A2. Single crystal growth
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Indexed keywords
COMPUTATIONAL FLUID DYNAMICS;
COMPUTER SIMULATION;
CRYSTAL GROWTH FROM MELT;
HEAT CONVECTION;
INTERFACES (MATERIALS);
MICROGRAVITY PROCESSING;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
SOLIDIFICATION;
FLOATING ZONE TECHNIQUES;
MARANGONI FLOW;
SEMICONDUCTING SILICON;
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EID: 0035426355
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01328-8 Document Type: Conference Paper |
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Times cited : (35)
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References (12)
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