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Surface Science

Volumn 488, Issue 1-2, 2001, Pages 15-22

Phase transition and stability of Si(1 1 1)-8 × '2'-In surface phase at low temperatures

(4) Ryjkov, Serguei V a,b Nagao, Tadaaki a,c Lifshits, Victor G b Hasegawa, Shuji a,c

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES (Russian Federation)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

Electrical transport (conductivity, resistivity, mobility, etc.); Indium; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Silicon; Surface thermodynamics (including phase transitions)

Indexed keywords

CARRIER MOBILITY; COOLING; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; INDIUM; LOW TEMPERATURE EFFECTS; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; THERMODYNAMIC STABILITY;

SURFACE THERMODYNAMICS;

SURFACE CHEMISTRY;

EID: 0035426292 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01145-1 Document Type: Article

Times cited : (55)

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