Failure mechanisms associated with the fabrication of InGaN-based LEDs

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1822-1825

  Maaskant, Pleun ^a   Akhter, Mahbub ^a   Lambkin, John ^a   Considine, Laurence ^b,c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Thomas Swann Scientific Equipment Ltd   (United Kingdom)

^c AIXTRON AG   (Germany)

Author keywords

Degradation; Gallium nitride; Light emitting diode; Metal migration

Indexed keywords

INDIUM GALLIUM NITRIDE; METAL MIGRATION; SAPPHIRE SUBSTRATES;

ELECTRIC CONTACTS; FAILURE ANALYSIS; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TEMPERATURE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0035423649     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936713     Document Type: Conference Paper

References (10)

1. The compound semiconductor industry in the 1990
2. UV hardening of photo- and electron beam resist patterns
3. The physical and chemical hardening of novalak resists
4. Deep U. V. hardening of positive photoresist patterns
5. Dry and wet etching for group III-nitrides
6. Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
7. Origin of hexagonal-shaped etch pits formed in (0001) GaN films
8. AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
9. Electromigration-induced failure of GaN multi-quantum well light emitting diode