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Volumn 15, Issue 2, 2001, Pages 117-121
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Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
BOUNDARY CONDITIONS;
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
CONVERGENCE OF NUMERICAL METHODS;
EIGENVALUES AND EIGENFUNCTIONS;
FINITE ELEMENT METHOD;
GALERKIN METHODS;
GATES (TRANSISTOR);
MATHEMATICAL MODELS;
POISSON EQUATION;
QUANTUM ELECTRONICS;
WAVE EQUATIONS;
WAVE FUNCTIONS;
MOSFET DEVICES;
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EID: 0035421861
PISSN: 12860042
EISSN: None
Source Type: Journal
DOI: 10.1051/epjap:2001103 Document Type: Article |
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Times cited : (4)
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References (7)
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