-
1
-
-
84977692032
-
Microstrip lines for microwave integrated circuits
-
May-June
-
M. V. Schneider, "Microstrip lines for microwave integrated circuits," Bell Syst. Tech. J., vol. 48, pp. 1421-1444, May-June 1969.
-
(1969)
Bell Syst. Tech. J.
, vol.48
, pp. 1421-1444
-
-
Schneider, M.V.1
-
2
-
-
0032312706
-
Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process
-
D. C. Laney, L. E. Larson, J. Malinowski, D. Harame, S. Subbanna, R. Volant, M. Case, and P. Chan, "Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 1998, pp. 101-104.
-
(1998)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 101-104
-
-
Laney, D.C.1
Larson, L.E.2
Malinowski, J.3
Harame, D.4
Subbanna, S.5
Volant, R.6
Case, M.7
Chan, P.8
-
3
-
-
0032307872
-
Monolithic transformers for silicon RF IC design
-
D. Cheung, J. R. Long, R. A. Hadaway, and D. L. Harame, "Monolithic transformers for silicon RF IC design," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 1998, pp. 105-108.
-
(1998)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 105-108
-
-
Cheung, D.1
Long, J.R.2
Hadaway, R.A.3
Harame, D.L.4
-
4
-
-
0018520383
-
High frequency behavior of microstrip open circuit terminations
-
J. R. Jams and A. Henderson, "High frequency behavior of microstrip open circuit terminations," J. Microwaves, Opt., Acoust., vol. 3, no. 5, pp. 205-218, 1979.
-
(1979)
J. Microwaves, Opt., Acoust.
, vol.3
, Issue.5
, pp. 205-218
-
-
Jams, J.R.1
Henderson, A.2
-
6
-
-
79952619136
-
-
DuPont, Wilmington, DE, 2611/5811 data sheet
-
DuPont, Wilmington, DE, 2611/5811 data sheet.
-
-
-
-
7
-
-
0026675977
-
Microwave characterization of microstrip lines and spiral inductors in MCM-D technology
-
R. G. Arnold and D. J. Pedder, "Microwave characterization of microstrip lines and spiral inductors in MCM-D technology," in Proc. 42nd Electron. Comp. Technol. Conf., 1992, pp. 823-829.
-
(1992)
Proc. 42nd Electron. Comp. Technol. Conf.
, pp. 823-829
-
-
Arnold, R.G.1
Pedder, D.J.2
-
8
-
-
0029276715
-
Si/SiGe epitaxial-base transistors-Part 1: Materials, physics and circuits
-
Mar.
-
D. Harame et al., "Si/SiGe epitaxial-base transistors-Part 1: Materials, physics and circuits," IEEE Trans. Electron Devices, pp. 455-468, Mar. 1995.
-
(1995)
IEEE Trans. Electron Devices
, pp. 455-468
-
-
Harame, D.1
-
9
-
-
0030386404
-
RF components implemented in an analog SiGe bipolar technology
-
J. N. Burghartz et al., "RF components implemented in an analog SiGe bipolar technology," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 1996, pp. 138-141.
-
(1996)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 138-141
-
-
Burghartz, J.N.1
-
10
-
-
0030399723
-
Temperature dependence of Q in spiral inductors fabricated in a SiGe/BiCMOS technology
-
R. Groves, K. Stein, D. Harame, and D. Jadus, "Temperature dependence of Q in spiral inductors fabricated in a SiGe/BiCMOS technology," IEEE Bipolar/BiCMOS Circuits Technol. Meeting, pp. 153-156, 1996.
-
(1996)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 153-156
-
-
Groves, R.1
Stein, K.2
Harame, D.3
Jadus, D.4
-
12
-
-
0030086653
-
Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
-
San Francisco, CA
-
L. Larson et al., "Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits," in Int. Solid-State Circuits Conf., San Francisco, CA, 1996, pp. 80-81.
-
(1996)
Int. Solid-State Circuits Conf.
, pp. 80-81
-
-
Larson, L.1
|