Rugged metal electrode (RME) for high density memory devices

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 8 A, 2001, Pages

  Joo, J H ^a   Kim, W D ^a   Jeong, Y K ^a   Won, S J ^a   Park, S Y ^a   Yoo, C Y ^a   Kim, S T ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Capacitance; Capacitor; DRAM; Reduction; Rugged films; Ruthenium

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; FABRICATION; RUTHENIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; SILICA; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

BOTTOM ELECTRODE; EQUIVALENT THICKNESS; HEMISPHERE GRAINED SILICON; HIGH DENSITY MEMORY CAPACITOR; HIGH DENSITY MEMORY DEVICE; METAL INSULATOR METAL CAPACITOR; REDUCTION AMBIENT; RUGGED FILM; RUGGED METAL ELECTRODE; VOLUME SHRINKAGE;

ELECTRODES;

EID: 0035415613     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l826     Document Type: Letter

References (5)