Submicron via-hole filling using Al low-pressure seed process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 5105-5108

  Yun, J H ^a   Kim, K Y ^a   Jin, S G ^a   Yoon, K R ^a   Lee, S H ^a   Ryu, I C ^a   Park, S K ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Al reflow; Aluminum low pressure seed (ALPS); Aluminum plug; High density plasma (HDP) oxide; Hydrogen silsesquioxane (HSQ); Intermetal dielectric (IMD); Physical vapor deposition (PVD); Siloxane silicon on glass (SOG); Via hole filling; Via resistance

Indexed keywords

DIELECTRIC MATERIALS; MOISTURE; PHYSICAL VAPOR DEPOSITION; SPUTTER DEPOSITION;

INTERMETAL DIELECTRIC (IMD) MATERIALS;

ALUMINUM;

EID: 0035414928     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5105     Document Type: Article

References (7)