Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 177-180

  Yamada, Masayoshi ^a   Ito, Kenichi ^a   Fukuzawa, Masayuki ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; COMPUTER AIDED ANALYSIS; CRYSTAL GROWTH FROM MELT; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); INCLUSIONS; PHOTOELASTICITY; POLARISCOPES; RESIDUAL STRESSES; SHEAR STRESS; STRAIN;

RESIDUAL STRAINS; SCANNING INFRARED POLARISCOPE; SLIP DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030414446     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)