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Volumn 227-228, Issue , 2001, Pages 21-26
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Structure of MBE grown semiconductor-atomic superlattices
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Author keywords
A3. Superlattices; B1. Oxides; B2. Semiconducting silicon; B3. Light emitting diodes
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Indexed keywords
ADSORPTION;
CRYSTAL DEFECTS;
ELECTROLUMINESCENCE;
INTERFACES (MATERIALS);
LIGHT EMITTING DIODES;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
STRAIN;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTOR-ATOMIC SUPERLATTICES (SAS);
SEMICONDUCTOR SUPERLATTICES;
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EID: 0035399220
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00626-1 Document Type: Conference Paper |
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Times cited : (13)
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References (16)
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