Atom technology for Josephson tunnel junctions: SrTiO3 substrate surface

Materials Science and Engineering B

Volumn 56, Issue 2-3, 1998, Pages 111-116

  Lippmaa, M ^a   Takahashi, K ^b   Ohtomo, A ^a   Ohashi, S ^a   Ohnishi, T ^a   Nakagawa, N ^a   Sato, T ^c   Iwatsuki, M ^c   Koinuma, H ^a   Kawasaki, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Shinkosha   (Japan)

^c NONE

Author keywords

SrTiO3; Step structure; Wet etching

Indexed keywords

EID: 0002241671     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00225-6     Document Type: Article

References (9)

1. P. Yu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Proc. Int. Conf. on the Phys. of Semiconduct., vol. 2, 1996, p. 1453.
2. Y. Segawa, A. Ohtomo, M. Kawasaki, H. Koinuma, Z.K. Tang, P. Yu, G.K.L. Wong, Phys. State Solids B202 (1997) 669.
3. Y. Inaguma, J.H. Sohn, I.S. Kim, M. Itoh, T. Nakamura, J. Phys. Soc. Jpn. 61 (1992) 3831.
4. J.G. Bednorz, K.A. Muller, Z. Phys. B64 (1986) 189.
5. N. Kanda, M. Kawasaki, T. Kitajima, H. Koinuma, Phys. Rev. B56 (1997) 8419.
6. R. Tsuchiya, M. Kawasaki, H. Kubota, J. Nishino, H. Sato, H. Akoh, H. Koinuma, Appl. Phys. Lett. 71 (1997) 1570.
7. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, H. Koinuma, Science 266 (1994) 1540.
8. M. Kawasaki, A. Ohtomo, T. Arakane, K. Takahashi, M. Yoshimoto, H. Koinuma, Appl. Surf. Sci. 107 (1996) 102.
9. M. Lippmaa, M. Kawasaki, A. Ohtomo, T. Sato, M. Iwatsuki, H. Koinuma, Appl. Surf. Sci. 130-132 (1998) 582.