Crystal growth and electromechanical properties of A1 substituted langasite (La3Ga5-xAlxSiO14)

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 289-293

  Kumatoriya, M ^a   Sato, H ^a   Nakanishi, J ^a   Fujii, T ^a   Kadota, M ^a   Sakabe, Y ^a  

^a MURATA MANUFACTURING CO LTD   (Japan)

Author keywords

A1. Characterization; A2. Czochralski method; A2. Single crystal growth; B1. Oxides; B2. Piezoelectric materials; B3. Filters

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; OXIDES; PERMITTIVITY; PIEZOELECTRICITY; SINGLE CRYSTALS; SUBSTITUTION REACTIONS; X RAY CRYSTALLOGRAPHY;

LANGASITE;

LANTHANUM COMPOUNDS;

EID: 0035398834     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01152-6     Document Type: Article

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