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Volumn 227-228, Issue , 2001, Pages 177-182

MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

Author keywords

A3. Polycrystalline deposition; B1. Nitrides; B2. Semiconducting gallium arsenide

Indexed keywords

PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

EID: 0035398813     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00659-5     Document Type: Conference Paper
Times cited : (2)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.