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Volumn 227-228, Issue , 2001, Pages 177-182
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MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications
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Author keywords
A3. Polycrystalline deposition; B1. Nitrides; B2. Semiconducting gallium arsenide
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Indexed keywords
PHOTOTHERMAL DEFLECTION SPECTROSCOPY;
ALUMINUM NITRIDE;
CURRENT VOLTAGE CHARACTERISTICS;
FILM GROWTH;
HALL EFFECT;
MOLECULAR BEAM EPITAXY;
POLYCRYSTALLINE MATERIALS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
SPUTTER DEPOSITION;
THERMAL CONDUCTIVITY OF SOLIDS;
SEMICONDUCTING FILMS;
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EID: 0035398813
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00659-5 Document Type: Conference Paper |
Times cited : (2)
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References (9)
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