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Volumn 227-228, Issue , 2001, Pages 630-633
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MBE grown high-quality CdSe-based islands and quantum wells using CdS compound and Se
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Author keywords
A1. Nanostructures; A3. Migration enhanced epitaxy; A3. Quantum islands; A3. Quantum wells; B1. Cadmium compounds; B1. Zinc compounds; B2. Semiconducting II VI materials
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Indexed keywords
CONTAMINATION;
MOLECULAR BEAM EPITAXY;
SEGREGATION (METALLOGRAPHY);
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SELENIUM;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTITUTION REACTIONS;
SURFACE ACTIVE AGENTS;
MIGRATION ENHANCED EPITAXY;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 0035398311
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00786-2 Document Type: Conference Paper |
Times cited : (9)
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References (8)
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