High-quality metamorphic HEMT grown on GaAs substrates by MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 210-213

  Zeng, Yiping ^a   Cao, Xin ^a   Cui, Lijie ^a   Kong, Meiying ^a   Pan, Liang ^a   Wang, Baoqiang ^a   Zhu, Zhanping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A3. Molecular beam epitaxy; B3. High electron mobility transistors

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035398293     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00665-0     Document Type: Conference Paper

References (7)