Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 16-20

  Ivanov, S V ^a   Sorokin, S V ^a   Kop'ev, P S ^a   Kim, J R ^b   Jung, H D ^b   Park, H S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICALLY PUMPED LASERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY; TERNARY SYSTEMS; THERMOANALYSIS; ZINC ALLOYS;

FLUX DENSITY; GROWTH RATE CONTROL; POWER DENSITY; SEPARATE CONFINEMENT HETEROSTRUCTURE;

EPITAXIAL GROWTH;

EID: 0030562399     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00588-9     Document Type: Article

References (10)

1. S.V. Ivanov, S.V. Sorokin, T.I. Kim, H.S. Park and P.S. Kop'ev, in: Workbook EUROMBE-VIII Workshop, Sierra Nevada, Spain, 1995, p. 119.
2. S.V. Ivanov, P.S. Kop'ev and N.N. Ledentsov, J. Crystal Growth 111 (1991) 151.
3. Z. Zhu, T. Nomura, M. Miyao and M. Hagino, J. Crystal Growth 96 (1989) 513.
4. K.A. Prior, J.M. Wallace, J.J. Hunter, S.J.A. Adams and B.C. Cavenett, J. Crystal Growth 101 (1990) 176.
5. J. Reichow, J. Griesche, N. Hoffmann, C. Muggelberg, H. Rossmann, L. Wilde, F. Henneberger and K. Jacobs, J. Crystal Growth 131 (1993) 277.
6. J.M. Gains and C.A. Ponzoni, in: Workbook of the Interna-tional Workshop on ZnSe-Based Blue-Green Laser Structures, Würzburgh, Germany, 1994, p. 47.
7. A. Koukito, H. Nakai, T. Suzuki and H. Seki, J. Crystal Growth 84 (1987) 425.
8. G.B. Stringfellow, J. Crystal Growth 27 (1974) 21.
9. R.E. Honig, RCA Rev. 23 (1962).
10. G.B. Stringfellow, J. Appl. Phys. 43 (1972) 3455.