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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6197-6201

Selective growth of GaAs on GaAs (111)B substrates by migration-enhanced epitaxy

(3) Suzuki, Keita a Ito, Masahiro a Horikoshi, Yoshiji a

a WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; EVAPORATION; MASKS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS;

MIGRATION-ENHANCED EPITAXY (MEE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033335315 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.6197 Document Type: Article

Times cited : (19)

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