The effect of III-V ratio at the substrate surface on the quality of inP grown by GSMBE

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 84-87

  Li, A Z ^a   Chen, J X ^a   Qi, M ^a   Ren, Y C ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTIMIZATION; PHOTOLUMINESCENCE; SURFACES;

ELECTRON MOBILITY; GAS SOURCE MOLECULAR BEAM EPITAXY; SUBSTRATE SURFACE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030190907     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01030-0     Document Type: Article

References (5)

1. Y. Kawaguchi, H. Asahi and H. Nagai, in: Proc. 12th Int. Symp. on GaAs and Related Compounds, Aaruizawa, 1985, Inst. Phys. Conf. Ser. 79, Ed. M. Fujimoto (Inst. Phys. London-Bristol, 1986) p. 79.
2. J.L. Benchimol, F. Aluoui, Y. Gao, G. Le Roux, E.V.K. Rao and F. Alexandre, J. Crystal Growth 105 (1990) 135.
3. A. Rudra, J.F. Carlin, M. Proctor and M. Ilegems, J. Crystal Growth 111 (1991) 589.
4. H. Rothfritz, G. Trakle, R. Muller and G. Weimann, J. Crystal Growth 120 (1992) 130.
5. M. Lambert, A. Perales, R. Vergnaud and C. Starck, J. Crystal Growth 105 (1990) 97.