SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 16, Issue 7, 2001, Pages 581-583

The design of resonant-cavity-enhanced photodetectors for a high bandwidth-efficiency product

(2) Bourdoucen, H a Jervase, J A a

a SULTAN QABOOS UNIVERSITY (Oman)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CAVITY RESONATORS; COMPUTER SIMULATION; OPTICAL COMMUNICATION; OPTICAL INTERCONNECTS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

HIGH BANDWIDTH EFFICIENCY (BWE) PRODUCT;

PHOTODETECTORS;

EID: 0035398113 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/7/309 Document Type: Article

Times cited : (1)

References (7)

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2
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3
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4
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- Resonant cavity enhanced photonic devices
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5
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- High-speed resonant cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
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6
- 0029346681
- 110-GHz GaInAs/InP double heterostructure p-i-n photodetectors
- (1995) IEEE J. Lightwave Tech. , vol.13 , pp. 1490-1499
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7
- 0033877929
- Design of resonant cavity enhanced (RCE) photodetectors using genetic algorithms
- (2000) IEEE J. Quantum Electron. , vol.36 , pp. 325-332
- Jervase, J.A.¹ Bourdoucen, H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.