SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 7, 2001, Pages 1475-1477

Very low noise avalanche detection

Author keywords

Avalanche photodiodes; High frequency bias circuit; Low noise

Indexed keywords

ELECTRIC FIELD EFFECTS; IONIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

HIGH-FREQUENCY BIAS CIRCUITS;

AVALANCHE DIODES;

EID: 0035396866 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.930670 Document Type: Article

Times cited : (4)

References (6)

1
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- Hayat, M.M.¹ Saleh, B.E.A.²

2
- 0000743459
- Theory of SiGe waveguide avalanche detectors operating at λ = 1.3 μm
- Apr.
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 791-796
- Herbert, D.C.¹

3
- 33747093049
- A novel low noise IMPATT diode
- Jan.
- (2000) IEEE Trans Electron Devices , vol.47 , pp. 197-206
- Herbert, D.C.¹ Davis, R.G.²

4
- 0031551196
- Avalanche noise in submicron p-i-n diodes
- (1997) Electron. Lett. , vol.33 , pp. 1257-1258
- Herbert, D.C.¹

5
- 0030121167
- Avalanche photodiodes and quenching circuits for single-photon detection
- (1996) Appl. Opt. , vol.35 , pp. 1956-1976
- Cova, S.¹ Ghioni, M.² Lacaita, A.³ Samori, C.⁴ Zappa, F.⁵

6
- 0004575160
- U.K. Patent Applicat. 9 827 748.6
- (1998)
- Herbert, D.C.¹ Chidley, E.T.R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.