4 nm gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere

Microelectronics Reliability

Volumn 38, Issue 2, 1998, Pages 213-216

  Bauer, A J ^a   Burte, E P ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; MOS DEVICES; OXIDATION; RAPID THERMAL ANNEALING; ULTRATHIN FILMS;

LOW PRESSURE OXIDATION;

DIELECTRIC FILMS;

EID: 0031996217     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00037-1     Document Type: Article

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