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Volumn 45, Issue 7, 2001, Pages 1115-1119
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Effect of temperature dependence of band gap and device constant on I-V characteristics of junction diode
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ENERGY GAP;
NUMERICAL ANALYSIS;
SEMICONDUCTOR JUNCTIONS;
SILICON;
THERMAL EFFECTS;
LATTICE INTERACTIONS;
SILICON DIODES;
LIGHT EMITTING DIODES;
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EID: 0035390753
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(01)00139-3 Document Type: Article |
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Times cited : (15)
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References (9)
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