Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1121-1125

  Perera, A G U ^a   Matsik, S G ^a   Letov, V Y ^a   Liu, H C ^b   Gao, M ^b   Buchanan, M ^b   Schaff, W J ^c  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

Artificial neurons; InGaAs quantum well devices; Nonlinear effects; Pulsing devices; s Type negative differential conductivity

Indexed keywords

DAMPING; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; OSCILLATIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRIGGER CIRCUITS; VOLTAGE CONTROL;

DATA PULSING; TRIGGERED PULSING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035390421     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00138-1     Document Type: Article

References (10)

1. Farey-fraction frequency modulation in the neuronlike output of silicon p-i-n diodes at 4.2 K
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6. Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice
7. Intervalley mechanism for the formation of s-type negative differential conductivity in short heterostructures
8. Circuit simulation of resonant tunneling double-barrier diode
9. GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm
10. Mode locked infrared sensors