Controllable bistabilities and bifurcations in a photoexcited GaAs/AlAs superlattice

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3845-3847

  Luo, K J ^a   Teitsworth, S W ^a,c   Kostial, H ^a   Grahn, H T ^a   Ohtani, N ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIFURCATION (MATHEMATICS); CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; LASER BEAM EFFECTS; OSCILLATIONS; PHOTOCURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

HOPF BIFURCATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032614632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124199     Document Type: Article

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