An ultrafast all-optical asymmetric Fabry-Pérot switch based on bulk Be-doped InGaAsP grown by He-plasma-assisted epitaxy

Optical and Quantum Electronics

Volumn 33, Issue 7-10, 2001, Pages 1055-1062

  Qian, Li ^a   Smith, P W E ^a   Robinson, B J ^b   Thompson, D A ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

All optical devices; Nonlinear optical devices; Ultrafast switching

Indexed keywords

BANDWIDTH; MOLECULAR BEAM EPITAXY; NONLINEAR OPTICS; PLASMA APPLICATIONS; POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ULTRAFAST SWITCHING;

OPTICAL SWITCHES;

EID: 0035387667     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017520910902     Document Type: Article

References (12)