Investigation of body-tie effects on ion beam induced charge collection in silicon-on-insulator FETs using the Sandia nuclear microprobe

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 181, Issue 1-4, 2001, Pages 305-310

  Walsh, David S ^a   Dodd, P E ^a   Shaneyfelt, M R ^a   Schwank, J R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Body tie design; Single event effects; SOI

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; ION BOMBARDMENT; PROBES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN JUNCTIONS; SINGLE EVENT EFFECTS (SEE);

FIELD EFFECT TRANSISTORS;

EID: 0035387549     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00486-4     Document Type: Conference Paper

References (10)