Magnetic switching in 100 nm patterned pseudo spin valves

IEEE Transactions on Magnetics

Volumn 37, Issue 4 I, 2001, Pages 2073-2075

  Castano F J ^a   Hao, Y ^a   Haratani, S ^a,c   Ross, C A ^a   Vogeli B ^b   Walsh, M ^b   Smith, Henry I ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b USA   (United States)

^c TDK CORPORATION   (Japan)

Author keywords

Interference lithography; MRAM; Nanomagnet array; PSV; Single domain particle

Indexed keywords

LITHOGRAPHY; MAGNETIC DOMAINS; MAGNETIC HYSTERESIS; MAGNETORESISTANCE; MAGNETOSTATICS; RANDOM ACCESS STORAGE; SPUTTERING; SWITCHING;

MAGNETIC SWITCHING; PSEUDO SPIN VALVES (PSV);

MAGNETIC FILMS;

EID: 0035386014     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.951057     Document Type: Article

References (8)

1. Applications of spin dependent transport materials
2. Pseudo spin valve MRAM cells with sub-micrometer critical dimensions
3. GMR applications
4. Size dependence of switching thresholds for pseudo spin valve MRAM cells
5. High density submicron magnetoresistive random access memory
6. Fabrication of patterned media for high density magnetic storage
7. Magnetotransport and domain structures in nanoscale NiFe/Cu/Co spin valve
8. In-plane anisotropy in arrays of magnetic ellipses