A method to characterize n+-polysilicon/oxide interface traps in ultrathin oxides

Electrochemical and Solid-State Letters

Volumn 4, Issue 6, 2001, Pages

  Chang, Kow Ming ^a   Chung, Yuan Hung ^a   Lee, Tzyk Cheang ^a   Sun, Yong Long ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; FERMI LEVEL; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; NUMERICAL METHODS; OXIDES; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

DETRAPPING BEHAVIOR; FIELD ENHANCED DETRAPPING EFFECT; FIRST ORDER RATE EQUATIONS; GATE LEAKAGE CURRENT; GATE VOLTAGE SWEEP RATE; POLYSILICON OXIDE INTERFACE TRAPS;

POLYSILICON;

EID: 0035383699     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1370416     Document Type: Article

References (3)