The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped Al x Ga 1-x As/In y Ga 1-y As/GaAs asymmetric single quantum wells

Applied Surface Science

Volumn 177, Issue 1-2, 2001, Pages 1-7

  Jung, M ^a   Kim, T W ^a   Lee, D U ^a   Choo, D C ^a   Yoo, K H ^b   Kim, D L ^c   Kim, M D ^d   Lim, H ^e  

^a Kwangwoon University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e Ajou University   (South Korea)

Author keywords

Al x Ga 1 x As In y Ga 1 y As GaAs; Spacer layer

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FAST FOURIER TRANSFORMS; FERMI LEVEL; HALL EFFECT; LIGHT MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

COULOMB INTERACTION THEORY; SHUBNIKOV-DE HAAS THEORY; VAN DER PAUW THEORY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035371047     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00122-2     Document Type: Article

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