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Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 3144-3147

Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

(4) Dunford, R B a,b,e Popovic, Dragana a,b Pollak, Fred H c Noble, Thomas F d,f

a CITY COLLEGE OF NEW YORK (United States)

b FLORIDA STATE UNIVERSITY (United States)

c CITY UNIVERSITY OF NEW YORK (United States)

d JOHNS HOPKINS UNIVERSITY (United States)

e UNIVERSITY OF CAMBRIDGE (United Kingdom)

f Fusion Semiconductor Systems (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343188234 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367128 Document Type: Article

Times cited : (9)

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