Effect of barrier width on the performance of quantum well infrared photodetector

Infrared Physics and Technology

Volumn 42, Issue 3-5, 2001, Pages 115-121

  Sim, Steven K H ^a   Liu, H C ^a   Shen, A ^a   Gao, M ^a   Lee, Kevin F ^a   Buchanan, M ^a   Ohno, Y ^b   Ohno, H ^b   Li, E H ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Design parameter; Quantum well infrared photodetector

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

INFRARED DETECTORS;

EID: 0035369297     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(01)00067-6     Document Type: Article

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