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Volumn 465, Issue 1, 2001, Pages 101-107

Charge compensation in irradiated semiconductor devices using high-resistivity field plates

Author keywords

Charge compensation; Field plates; Oxide trapped charge; Polysilicon resistors; Radiation damage; Semiconductor radiation detectors; Sensors

Indexed keywords

CAPACITANCE; ELECTRODES; POLYSILICON; RADIATION DAMAGE; RESISTORS; SENSORS;

EID: 0035366779     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00363-1     Document Type: Article
Times cited : (1)

References (26)
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    • Passivated semiconductor pn junction of high electric strength and process for the production thereof, April 17, 1984, US Patent 4442592
    • Kemmer, J.1
  • 9
    • 0016597193 scopus 로고
    • The electrical properties of polycrystalline silicon films
    • (1975) J. Appl. Phys. , vol.46 , pp. 5247
    • Seto, J.1
  • 24
    • 0004785730 scopus 로고    scopus 로고
    • Avant! Corporation, 46871 Bayside Parkway, Fremont CA 94538


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.