On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1222-1224

  Kumar, M J ^a   Patri, V S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Base doping profile; Base transit time; Bipolar transistors

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; ITERATIVE METHODS; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES;

BASE DOPING PROFILES; BASE TRANSIT TIME;

BIPOLAR TRANSISTORS;

EID: 0035366262     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925251     Document Type: Article

References (10)

1. A new approach to optimizing the base profile for high speed bipolar transistors
2. Optimum base doping profile for minimum base transit time
3. Distribution of base dopant for transit time minimization in a bipolar transistor
4. Two integral relations pertaining to electron transport through a bipolar transistor with a nonuniform energy gap in the base region
5. An empirical fit to minority carder mobilities
6. A closed form analytical BJT forward transit time model considering bandgap narrowing effects and concentration dependent diffusion coefficients
7. The effects of emitter region recombination and bandgap narrowing on the current gain and the collector lifetime of high voltage bipolar transistors
8. Measurement of bandgap narrowing in Si bipolar transistors
9. Unified apparent bandgap narrowing in n- and p-type silicon