30Mrad(SiO2) radiation tolerant pixel front end for the BTEV experiment

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 465, Issue 1, 2001, Pages 166-175

  Mekkaoui, Abder ^a   Hoff, Jim ^a  

^a FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Deep submicron; Pixe; Radiation tolerance

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; READOUT SYSTEMS; SILICA; SILICON SENSORS;

RADIATION TOLERANCE;

PARTICLE DETECTORS;

EID: 0035365895     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00385-0     Document Type: Article

References (11)

1. Results from and FPIX0 Chip Bump-bonded to an Atlas Pixel Detector
2. Development of a pixel readout chip for BTeV
3. BTeV silicon pixel detector - 1999 beam test results
4. Total dose behavior of submicron and deep submicron CMOS technologies
5. A quarter micron CMOS technology for the radiation environment of LHC
6. Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practial design aspects